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PrefixNamespace IRI
n4http://hub.abes.fr/springer/periodical/11082/1996/volume_28/issue_7/B916A09733365B9BE053120B220A19A2/authorship/
marcrelhttp://id.loc.gov/vocabulary/relators/
dctermshttp://purl.org/dc/terms/
vivohttp://vivoweb.org/ontology/core#
n13http://hub.abes.fr/springer/periodical/11082/1996/volume_28/issue_7/
n15http://hub.abes.fr/springer/periodical/11082/
n8http://hub.abes.fr/springer/periodical/11082/1996/volume_28/issue_7/B916A09733365B9BE053120B220A19A2/m/
n2http://hub.abes.fr/springer/periodical/11082/1996/volume_28/issue_7/B916A09733365B9BE053120B220A19A2/
bibohttp://purl.org/ontology/bibo/
rdachttp://rdaregistry.info/Elements/c/
hubhttp://hub.abes.fr/namespace/
n14http://hub.abes.fr/referentiel/springer/periodical/11082/articletypes/
rdfhttp://www.w3.org/1999/02/22-rdf-syntax-ns#
n16http://hub.abes.fr/springer/periodical/11082/1996/volume_28/issue_7/B916A09733365B9BE053120B220A19A2/copyrightholder/
rdawhttp://rdaregistry.info/Elements/w/
xsdhhttp://www.w3.org/2001/XMLSchema#
n10http://hub.abes.fr/referentiel/springer/articletypes/
Subject Item
n2:w
rdf:type
bibo:Article rdac:C10001
dcterms:isPartOf
n13:w
dcterms:title
Monolithically-integrated optoelectronic circuit for ultrafast sampling of a dual-gate field-effect transistor
rdaw:P10072
n8:print n8:web
vivo:relatedBy
n4:3 n4:1 n4:4 n4:5 n4:6 n4:2
marcrel:aut
n2:baynesndeb n2:cleaverjra n2:mishimat n2:ohbui n2:allamj n2:ogawak
dcterms:abstract
Abstract. An integrated optoelectronic circuit for ultrafast sampling of multi-terminal devices is described. This is achieved using optimized photoconductive switches fabricated from low-temperature-grown GaAs, monolithic integration of the device with the sampling circuit, control of the electromagnetic modes propagating on the coplanar waveguide using microfabricated airbridges, and discrimination of guided and freely-propagating modes using a novel electrooptic sampling method. As an example, the scattering parameters associated with the propagation of a picosecond pulse through one of the gates of a dual-gate heterojunction field-effect transistor are obtained at frequencies up to 300 GHz. The inter-gate capacitance is determined by measuring the electromagnetic transient coupled between the gates.
hub:articleType
n10:originalpaper n14:papers
hub:publisher-id
BF00820154
dcterms:dateCopyrighted
1996
dcterms:rightsHolder
n16:chapmanhall
hub:isPartOfThisJournal
n15:w