| Abstract
| - An ordered GeSi2 structure has been observed in layersof approximate compositionGeSi2Cxgrown epitaxially on Si. Except for regions very close to theinterface, the ordered phaseforms throughout the layer and is readily identified by high-resolutionelectron microscopyand electron diffraction. The structure is formed by Ge−Si−Siordering along the diamond[111] direction to yield a new structure withP3̄m1 symmetry. Analogous (but notasextensive) ordering in theGe2SiCx (x = 6%)system is also observed. The role of carbon,which is incorporated into the material as Si4C tetrahedra,is used to explain the formationof these novel structures.
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