| Abstract
| - Results are presented on a method that uses laser-assisted reactivity in a constrainedgas expansion to facilitate film growth. The 193 nm output of an ArF excimer laser is focusedthrough a hole in a substrate into a gas pulse consisting of trimethylamine−alane (TMMA).As shown by mass spectral data, laser irradiation of the TMAA clearly results in significantgas-phase reactivity. While no discernible film growth takes place in the absence of laserradiation, the laser readily brings about film growth on a silicon substrate, even though thesubstrate is held at room temperature and no laser/substrate interactions occur. Atomicforce microscopy is used to investigate the surface morphology present in different regionsof the deposited film, and chemical composition in those regions is investigated with Augerelectron spectroscopy.
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