The origin of the metal−semiconductor transition in ruthenium pyrochlores is explained by a combination of structural studies and band structure calculations. These demonstrate the structural and electronic importance of the Bi 6s lone pair electrons and oxygen vacancies.
The structures of 13 members in the series Bi2-yYbyRu2O7-δ have been refined using high-resolution powder neutron diffraction data. The resulting structural parameters have beenused to calculate the bandwidths for the oxides, and these show a smooth reduction in thet2g bandwidth as the Yb content is increased. Resistivity measurements show a transitionfrom metallic to semiconducting behavior occurs near y ≈ 0.9. This corresponds to the pointat which the oxygen vacancies are no longer present in the oxides. Evidence for disorder ofthe Bi cations is presented.