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À propos de : Very Stable Low Band Gap Polymer for Charge StoragePurposes and Near-Infrared Applications        

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  • Very Stable Low Band Gap Polymer for Charge StoragePurposes and Near-Infrared Applications
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  • A new low band gap polymer, poly(1,3-bis(2‘-[3‘,4‘-ethylenedioxy]thienyl)-benzo[c]thiophene-N-2‘ ‘-ethylhexyl-4,5-dicarboximide) P(DEDOT-ITNIm), was synthesized. Electrochemicallyprepared polymer films were very stable to overoxidation upon p-doping and stable uponn-doping. The low band gap of the polymer films, 1.10 eV, was determined from electrochemistry and spectroelectrochemistry. Thin polymer films on ITO-coated glass slides showedexceptional optical properties upon both p- and n-doping, these were small changes in thetransparency and color of the polymer in the visible region but more dramatic changes inthe near-infrared region. The charge storage capacity of P(DEDOT-ITNIm) films is veryhigh when compared to other members of the conducting polymers family, making thispolymer a good candidate for charge storage purposes; e.g., as supercapacitors.
  • n- and p-Dopable P(DEDOT-ITNIm) films exhibit high stability, low band gap (1.10 eV), and high charge storage compared to other conducting polymers. They also showed exceptional optical properties such as small changes in the transparency and color in the visible region but more dramatic changes in the near-infrared region.
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