| Abstract
| - We report on a very simple, efficient, and economical synthetic technique that produces SiC of a highsurface area, and under different conditions of a silicon carbide−carbon nanocomposite (SCCN) at arelatively low temperature. A high yield of pure products is obtained in a one-stage, single-precursorreaction, without a catalyst. The cracking/dissociation of a triethylsilane precursor is carried out separatelyin a closed vessel cell (Swagelok) that was heated at 800 °C for 3 h, yielding SCCN, and at 1000 °C for3 h, yielding SiC. This synthetic process is termed RAPET (Reactions under Autogenic Pressure at ElevatedTemperature) process for the synthesis of nanomaterials.
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