| Abstract
| - The atomic layer deposition growth of Ga2O3 films was demonstrated using Ga2(NMe2)6 and waterwith substrate temperatures between 150 and 300 °C. At 250 °C, surface saturative growth was achievedwith Ga2(NMe2)6 vapor pulse lengths of ≥1.5 s. The growth rate was 1.0 Å/cycle at substrate temperaturesbetween 170 and 250 °C. Growth rates of 1.1 and 0.89 Å/cycle were observed at 150 and 275 °C,respectively. In a series of films deposited at 250 °C, the film thicknesses varied linearly with the numberof deposition cycles. Time-of-flight elastic recoil detection analyses demonstrated stoichiometric Ga2O3films, with carbon, hydrogen, and nitrogen levels between 1 and 2.1, 4.8−5.4, and 0.6−0.9 at. %,respectively, at substrate temperatures of 170, 200, and 250 °C. The as-deposited films were amorphous,but crystallized to β-Ga2O3 films upon annealing between 700 and 900 °C under a nitrogen atmosphere.Atomic force microscopy showed root-mean-square surface roughnesses of 0.4 and 0.6 nm for filmsdeposited at 170 and 250 °C, respectively.
- The atomic layer deposition of Ga2O3 films is described. Ga2(NMe2)6 and water were employed as the precursors. Surface-limited growth is observed between 170 and 250 °C, with a growth rate of 1.0 Å/cycle. The process affords amorphous Ga2O3 films with low impurity content.
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