| Attributs | Valeurs |
|---|
| type
| |
| Is Part Of
| |
| Subject
| |
| Title
| - Lithium Insertion in Channel-Structured β-AgVO3: InSitu Raman Study and Computer Simulation
|
| has manifestation of work
| |
| related by
| |
| Author
| |
| Abstract
| - Lithium insertion is the fundamental electrochemical process of rechargeable lithium batteries. We report here in situ Raman and atomistic simulation studies of the lithium insertion process in β-AgVO3 nanowired structure material. Key issues of the process relate to structural variations and lithium migration pathways in the β-AgVO3. The simulation model shows good agreement with the experimental results. It indicates that the lithium insertion can be divided into three steps. The reduction sites at each step in the β-AgVO3 lattice are confirmed: the most favorable reduction sites at higher potential are V1/V4; at medium potential, Ag2/Ag3 are reduced and substituted; after that Li+ ion reduces V2/V3/Ag4 and further reduces V1/V4. The migration pathways of Li+ ions in β-AgVO3 are proposed for the first time. Our discovery would help us to greatly understand the deep insight of the Li+ insertion process in lithium batteries.
- In situ Raman and atomistic simulations are studied on the lithium insertion process in β-AgVO3 nanowired structure materials. Key issues of the process relate to structural variations and lithium migration pathways in the β-AgVO3. The simulation model shows good agreement with the experimental results. The lithium migration pathways in the β-AgVO3 can be divided into three steps.
|
| Alternative Title
| - Lithium Insertion in Channel-Structured β-AgVO3
|
| is part of this journal
| |
