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| Title
| - Green and Red Emissions at Room Temperature on Er-Doped GaN Submicrometer Rods Synthesized by a Simple Chemical Vapor Deposition Technique
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| Abstract
| - Er-doped GaN submicrometer rods have been grown on silicon (001) by the direct reaction of gallium and ammonia in a CVD system. Green and red emissions at room temperature coming from the rods have been observed when the semiconductor has been excited below the energy of its bandgap.
- Er-doped GaN submicron rods have been synthesized on silicon (001) by the direct reaction of gallium and ammonia in a CVD system. Green and red emissions at room temperature coming from the rods with excitation below the energy of the bandgap of the semiconductor have been recorded.
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| Alternative Title
| - Emissions of Er-Doped GaN Submicrometer Rods
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