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À propos de : Stable Solution-Processed High-Mobility Substituted PentaceneSemiconductors        

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  • Stable Solution-Processed High-Mobility Substituted PentaceneSemiconductors
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  • Substitution with appropriate ethynyl groups at the C-6/C-13 positions of pentacene leads to phenomenal enhancement in both solubility and photooxidative stability. This has enabled solution fabrication of a high-mobility semiconductor for organic thin-film transistors under ambient conditions. Field-effect mobility up to 0.52 cm2 V-1 s-1 has been achieved in OTFTs using a solution-deposited 6,13-bis(4-pentylphenylethynyl)pentacene semiconductor.
  • The synthesis, photooxidative stability, and field-effect transistor properties of a series of 6,13-diethynyl-substituted pentacene derivatives are described. Substitution with appropriate solubilizing ethynyl functionsat the C-6/C-13 positions of pentacene, which promote extended π-electron delocalization from thepentacene nucleus, leads to phenomenal enhancement in both solubility and photooxidative stability.This has enabled fabrication of a stable, solution-processed thin-film semiconductor under ambientconditions for high-mobility organic thin-film transistors. Specifically, a solution-processed 6,13-bis(4-pentylphenylethynyl)pentacene semiconductor has yielded mobility as high as 0.52 cm2 V-1 s-1 in OTFTs.
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