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À propos de : Detection of a Formate Surface Intermediate in the Atomic Layer Deposition of High-κ Dielectrics Using Ozone        

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  • Detection of a Formate Surface Intermediate in the Atomic Layer Deposition of High-κ Dielectrics Using Ozone
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  • In situ FTIR studies of O3 interacting with TMA-derived Al2O3 surfaces reveal that O incorporation into the surface results in a stable formate intermediate. DFT calculations provide conclusive band assignments, identifying the surface species. These results have broad implications for understanding the high-κ dielectric ALD process using an O3 precursor
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