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À propos de : Growth of Microscale In2O3 Islands on Y-Stabilized Zirconia(100) by Molecular Beam Epitaxy        

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  • Growth of Microscale In2O3 Islands on Y-Stabilized Zirconia(100) by Molecular Beam Epitaxy
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  • Arrays of In2O3 islands have been grown on cubic zirconia by oxygen plasma assisted molecular beam epitaxy at high substrate temperatures. The square pyramidal epitaxial islands have a narrow size distribution centering on 1 μm and a uniform azimuthal orientation with square edges aligned along the ⟨110⟩ directions of the substrate.
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