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| Title
| - Origin of Giant Dielectric Response in Nonferroelectric CaCu3Ti4O12: Inhomogeneous Conduction Nature Probed by Atomic Force Microscopy
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| Abstract
| - Local probing of conduction behaviors using atomic force microscopy clearly shows that the grain boundary of polycrystalline CaCu3Ti4O12 is semiconducting. In contrast, the grain is a mixture of semiconducting and insulating regions. This inhomogeneous conductive feature leads to giant dielectric response in CaCu3Ti4O12. Theoretical analysis demonstrates that the dielectric response follows a typical Debye-type relaxation, and its unusual temperature dependence originates from the thermal activation behavior of free carries within the semiconducting regions in the grain. An effective way to control the electrical properties of CCTO is to control the defect density within a grain rather than the grain boundary.
- Local current probing with AFM shows that the giant dielectric response reported for CaCu3Ti4O12 is due to electrically inhomogeneous nature of the crystal. The dielectric responses to temperature and frequency can be well reproduced by the electrical heterostructure consisting of semiconducting and insulating regions.
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| Alternative Title
| - Dielectric Response in Nonferroelectric CaCu3Ti4O12
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