| Abstract
| - A novel class of inorganic−organic-layered structures with the formula CdE·0.5en (E = S, Se, Te, en = ethylenediamine) was obtained through solvothermal treatment of elements S, Se, or Te with Cd2+ at appropriate temperatures. On the basis of the crystal structures of these precursors, a mechanism for both the phase and morphology formations of CdE nanorods in ethylenediamine-mediated solvothermal synthesis was derived.
- A novel class of inorganic−organic-layered structures, CdE·0.5en (E = S, Se, Te; en = ethylenediamine), wereobtained through reactions between elemental S, Se, or Te and Cd2+ at appropriate solvothermal temperatures.These compounds contain atomic sheets of inorganic CdE frameworks spaced by ethylenediamine molecules,which serve as bridged ligands between two Cd atoms in neighboring inorganic layers and also prevent theseinorganic slabs from collapsing and condensing into the bulk CdE phase. From the structural viewpoint, the essentialmechanism for the formation of CdE nanorods in ethylenediamine-mediated solvothermal synthesis and the uniquestriated morphologies of the CdE products obtained through post-hydrothermal treatment of the CdE·0.5en layeredprecursors were revealed. The structure-selective crystallization of II−VI compound semiconductors in ethylenediamineunder conditions of direct solvothermal synthesis or during the postconversion of the layered precursors was alsoexplained on the basis of the similarity in atomic connectivity between the inorganic slabs in the precursors andthose in wurtzite or zinc-blende phases. In addition, the CdE·0.5en precursors, which possess strong quantum-confinement effects resulting from their special inorganic−organic structures with alternating CdE and ethylenediaminelayers, provide further possibilities of tailoring their electronic, magnetic, and optical properties through the structuralmodification of either the inorganic or the organic components.
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