| Abstract
| - Colloidal InP quantum wires are grown by the solution−liquid−solid (SLS) method, and passivatedwith the traditional quantum dots surfactants 1-hexadecylamine and tri-n-octylphosphine oxide. The sizedependence of the band gaps in the wires are determined from the absorption spectra, and compared toother experimental results for InP quantum dots and wires, and to the predictions of theory. Thephotoluminescence behavior of the wires is also investigated. Efforts to enhance photoluminescenceefficiencies through photochemical etching in the presence of HF result only in photochemical thinning orphotooxidation, without a significant influence on quantum-wire photoluminescence. However, photooxidationproduces residual dot and rod domains within the wires, which are luminescent. The results establish thatthe quantum-wire band gaps are weakly influenced by the nature of the surface passivation and that colloidalquantum wires have intrinsically low photoluminescence efficiencies.
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