| Abstract
| - Although ZrO2 and HfO2 are, for the most part, quite similar chemically, subtle differences in their electronicstructures appear to be responsible for differing MO2/Si (M = Zr, Hf) interface stabilities. To shed light onthe electronic structure differences between ZrO2 and HfO2, we have conducted joint experimental andtheoretical studies. Because molecular electron affinities are a sensitive probe of electronic structure, wehave measured them by conducting photoelectron spectroscopic experiments on ZrO2- and HfO2-. The adiabaticelectron affinity of HfO2 was determined to be 2.14 ± 0.03 eV, and that of ZrO2 was determined to be 1.64± 0.03 eV. Concurrently, advanced electronic structure calculations were conducted to determine electronaffinities, vibrational frequencies, and geometries of these systems. The calculated CCSD(T) electron affinitiesof HfO2 and ZrO2 were found to be 2.05 and 1.62 eV, respectively. The molecular results confirm earlierpredictions from solid state calculations that HfO2 is more ionic than ZrO2. The excess electron in MO2-occupies an sd-type hybrid orbital localized on the M atom (M = Zr, Hf). The structural parameters of ZrO2and HfO2 and their vibrational frequencies were found to be very similar. Upon the excess electron attachment,the M−O bond length increases by ca. 0.04 Å, the OMO angle increases by 2−4°, and frequencies of allvibrational modes become smaller, with the stretching modes being shifted by 30−50 cm-1 and the bendingmode by 15−25 cm-1. Together, these studies unveil significant differences in the electronic structures ofZrO2 and HfO2 but not in their structural or vibrational characteristics.
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