| Abstract
| - ZnO nanowire field-effect transistors (FETs) were fabricated and studied in vacuum and a variety of ambientgases from 5 to 300 K. In air, these n-type nanowire transistors have among the highest mobilities yet reportedfor ZnO FETs (μe = 13 ± 5 cm2 V-1 s-1), with carrier concentrations averaging 5.2 ± 2.5 × 1017 cm-3 andon−off current ratios ranging from 105 to 107. Four probe measurements show that the resistivity of theTi/Au−ZnO contacts is 0.002−0.02 Ω·cm. The performance characteristics of the nanowire transistors areintimately tied to the presence and nature of adsorbed surface species. In addition, we describe a dynamicgate effect that seems to involve mobile surface charges and causes hysteresis in the transconductance, amongother effects.
|
