| Abstract
| - Thin ferromagnetic films can be lithographically patterned and incorporated into magnetoelectronic devicesthat have applications in digital electronics. Their bistable magnetization states are adaptive to application asmemory cells in nonvolatile, magnetic random access memories (MRAM). Prototype MRAM chips arecharacterized by rapid, low energy switching and excellent durability. This novel approach to integrated memoryis expected to have immediate impact in the niche market of high performance, embedded memory. Researchin the field is confronting several issues associated with the reproducibility of device behavior and scalingdevice structures to the nanometer dimensions of competing silicon devices. If successful solutions are found,the technology could challenge large segments of the semiconductor memory market. Another research effortis aimed at the development of a spintronic device with power gain. Such a device would enable new kindsof logic architectures, as well as novel on-chip combinations of memory and logic. Our studies investigatethe dynamics of high-speed magnetization switching processes. We are also studying charge and spin transportin high mobility semiconductor heterostructures, with the ultimate goal of creating a spin-injected field effecttransistor.
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