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| - Optoelectronic Switches Based on Wide Band Gap Semiconductors
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| - Switching of photocurrent direction in semiconducting systems upon changes of the electrode potential orincident light wavelength was realized by a series of photoelectrodes covered with titania modified withpentacyanoferrate complexes, [Fe(CN)5L]n- (L = NH3, thiodiethanol, thiodipropanol). These materials werecharacterized by optical spectroscopy and electrochemistry. The structure of the surface complexes was modeledusing simple quantum-chemical models. The electrodes described in this paper enable control of thephotocurrent direction by two stimuli: Changing the wavelength or the photoelectrode potential easily switchesthe direction of photocurrent. The materials are different from those of similar characteristics studied byother authors: They are not composites comprising of two types of semiconductors but rather engineereduniform materials. The photocurrent switching phenomenon is an intrinsic feature resulting from a specificelectronic structure of the surface-modified semiconductor.
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