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| - Maskless Plasma Etching of Diamond Cones: The Role of CH4 Gas and Enhanced FieldEmission Property
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| - Diamond cone arrays were formed by plasma etching of diamond films in a hot filament chemical vapordeposition (HFCVD) system. The role of CH4 in the formation of diamond cone arrays was investigated. Itwas found that addition of CH4 to H2 plasma could enhance the plasma intensity and hence the etchingefficiency to improve the formation of diamond cones with high aspect ratio and controllable density. Themicroscopic measurement of the as-formed diamond cones shows that they have an inner core of polycrystallinestructure and an outer layer of amorphous carbon. These as-formed diamond cones have exhibited field emissioncurrent density of 1 μA/cm2 at threshold field of 5 V/μm. For an applied field of 12 V/μm, the emissioncurrent density can rapidly reach as high as 560 μA/cm2. The property of high field electron emission isattributed to the high aspect ratio of as-formed diamond cones and the appropriate cone density as well as theouter amorphous carbon layer which acts as a pathway for electron-hopping conduction during field electronemission.
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