| Abstract
| - Patterned self-assembled monolayers can be used to direct surface processes to occur at specific locations ona surface. Recently, patterned SAMs have been shown to function as molecular resists in directingelectrodeposition. In this paper, we explore the limits of ODT SAMs as molecular resists for theelectrodeposition of cobalt as a function of deposition potential, time, and Co(II) concentration. We showthat patterned ODT SAMs can serve as effective resists for eletrodeposition of high fidelity features with nobreakdown of the ODT-modified regions. Breakdown results in formation of Co islands in the ODT-modifiedregions and is dependent on deposition potential, time, and Co(II) concentration.
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