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| - Experimental and Theoretical Studies of Trimethylene Sulfide-Derived Nanostructures onp- and n-Type H-Silicon(100)-2 × 1
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| - The nanoscale structuring of molecules on silicon surfaces is one approach for combining the tuneable propertiesof chemical species with the functionality of semiconductor materials. In this study, we report on the growthcharacteristics of trimethylene sulfide (TMS) on p- and n-type H−Si(100)-2 × 1. The nanostructures formedby TMS on either surface are indistinguishable by scanning tunneling microscopy (STM). However, high-resolution electron energy loss spectroscopy (HREELS) and modeling by density functional theory indicatethat the molecular attachment mechanism differs with dopant type. Our results show that TMS adds to asurface silicon dangling bond through the formation of a Si−S bond on p-type silicon and through the formationof a Si−C bond on n-type silicon. In both cases, the added TMS undergoes ring opening following covalentbond formation with the surface. The different ring-opened radicals are able to abstract a hydrogen atomfrom one of two neighboring silicon dimers. The overall reaction produces TMS-derived nanostructures thatgrow via a square-wave pattern on the neighboring edges of two dimer rows.
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