Documentation scienceplus.abes.fr version Bêta

À propos de : Growth of Vertically Aligned ZnO Nanobelt Arrays on GaN Substrate        

AttributsValeurs
type
Is Part Of
Subject
Title
  • Growth of Vertically Aligned ZnO Nanobelt Arrays on GaN Substrate
has manifestation of work
related by
Author
Abstract
  • Uniformly aligned ZnO nanobelt (NB) arrays have been grown on a (0001) GaN substrate without foreign catalyst such as Au. The NBs mainly grew along [011̅3] at beginning when the temperature was relatively low, then switched to [011̅0] at high temperature, and finally switched to [011̅3] when the temperature was lowed. The alignment of the NBs was due to not only the epitaxial orientation relationship with the substrate but more importantly the presence of metallic Zn nanoparticles at the tip of the ZnO NBs, which were produced by reduction of ZnO source material. The Zn nanoparticle has a fixed orientation relationship with the ZnO NB, indicating that the growth follows the self-catalyzed vapor−liquid−solid process.
Alternative Title
  • ZnO Nanobelt Arrays on GaN Substrate
is part of this journal



Alternative Linked Data Documents: ODE     Content Formats:       RDF       ODATA       Microdata