| Abstract
| - Photoelectron spectroscopy (PES) and temperature-programmed desorption (TPD) studies investigatedthe chemistry of Cl2 on Si/Cu(100). Si deposition was carried out by exposing Cu(100) to SiH4 at 420 K.PES showed that the exposure of this Si-saturated surface to Cl2 resulted in the formation of SiCl, SiCl2,and SiCl3 species at 120 K, with the latter species becoming more prevalent at higher Cl coverages. Heatingof the chlorinated surface between 120 and 500 K increased the concentration of SiCl3 species. TPD studiesof Cl2/Si/Cu(100) as a function of Si coverage showed primarily SiCl3 (and probably SiCl2) desorption atthe lower Si coverages and SiCl4 at the highest Si coverage. The majority of the Si was not removed fromthe surface as chlorosilane product, but instead diffused into the Cu bulk at temperatures above 500 K.
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