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À propos de : Atomic Layer Deposition of Thin Films Using O2 as OxygenSource        

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  • Atomic Layer Deposition of Thin Films Using O2 as OxygenSource
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  • Atomic layer deposition of TiO2 films was realized by using alternate pulses of TiI4 and O2. The filmgrowth mechanism was studied by quartz crystal microbalance in the temperature range 200−350 °C. Theadsorption of TiI4 proceeded via partial decomposition of TiI4, which resulted in an enhanced reactivityby the formation of a TiIx surface layer with x< 3. The reactivity of O2 toward this layer was sufficientto form TiO2 at an O2 pulse duration of 2 s when the substrate temperature was not lower than 235 °C.TiO2 films were also grown on Si(100) substrates at deposition temperatures between 230 and 460 °C. Noresidual iodine could be detected in the films grown at temperatures higher than 230 °C. Phase-pureanatase was formed in the whole temperature range except at the highest temperature where rutile wasalso obtained.
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