| Abstract
| - A strategy for achieving geometrical patterning of DNA is described. The approach comprises patterningof oligonucleotides on a glycidyl oxypropyl trimethoxy silane modified Si wafer by spin casting a photoresistmixture consisting of a photoacid generator and a reactive blocking group and exposing through a photomask.Highly specific micrometer-sized DNA geometrical patterns were obtained, activity (multiple hybridization−dehybridization cycles with no loss of activity) and specificity of which were assessed using labeledcomplementary oligonucleotides. To further use such an approach toward integration, a novel two-stagestrategy has been demonstrated, where the first stage lithography was employed to pattern electrodes anda second stage alignment/exposure was employed to define oligonucleotides between the electrodes.
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