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| - Controlled Grafting of Well-Defined Epoxide Polymers onHydrogen-Terminated Silicon Substrates bySurface-Initiated ATRP at Ambient Temperature
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| - Controlled grafting of well-defined epoxide polymer brushes on the hydrogen-terminated Si(100) substrates(Si−H substrates) was carried out via the surface-initiated atom-transfer radical polymerization (ATRP)at room temperature. Thus, glycidyl methacrylate (GMA) polymer brushes were prepared by ATRP fromthe α-bromoester functionalized Si−H surface. Kinetic studies revealed a linear increase in GMA polymer(PGMA) film thickness with reaction time, indicating that chain growth from the surface was a controlled“living” process. The graft polymerization proceeded more rapidly in the dimethylformamide/water (DMF/H2O) mixed solvent medium than in DMF, leading to much thicker PGMA growth on the silicon surfacein the former medium. The chemical composition of the GMA graft-polymerized silicon (Si-g-PGMA) surfaceswere characterized by X-ray photoelectron spectroscopy (XPS). The fact that the epoxide functional groupsof the grafted PGMA were preserved quantitatively was revealed in the reaction with ethylenediamine.The “living” character of the PGMA chain end was further ascertained by the subsequent growth of apoly(pentafluorostyrene) (PFS) block from the Si-g-PGMA surface, using the PGMA brushes as themacroinitiators.
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