| Abstract
| - Monomeric gallium and indium compoundsArGaN(SiMe3)2Cl (1),ArIn{N(SiMe3)2}2(2),ArGa{P(H)Ar}2 (3),ArIn{P(H)Ar}2(4), andArGa(SAr)2 (5) [Ar =2,4,6-But3C6H2] havebeensynthesized by the reaction of ArMCl2 (M = Ga and In)with corresponding lithium amide,phosphide, or thiolate compounds and characterized by elementalanalysis and NMR andmass spectroscopy. For compounds 1−3, thesingle-crystal X-ray structures have beendetermined. The metal center adopts a trigonal planar geometrywith metal to group 15atoms at distances of 1.867(10) Å (Ga−N), 2.099(av) Å(In−N), and 2.388(av) Å (Ga−P),respectively . The energy barrier of the dynamic processesinvolved in these compounds asestimated by variable-temperature NMR lies in the range 14.2−17.8kcal mol-1.
- Monomeric gallium and indium compoundsArGaClN‘‘ (1), ArInN‘‘2 (2),ArGa{P(H)Ar}2 (3),ArIn{P(H)Ar}2 (4), andArGa(SAr)2 (5) [Ar =2,4,6-But3C6H2, N‘‘ =N(SiMe3)2] have been synthesized by thereaction of ArMCl2 (M = Ga and In) with correspondinglithium amide, phosphide, or thiolate compounds. The X-raystructures of 1−3 have been determined.The energy barrier of the dynamic processes involved in thesecompounds as estimated by variable-temperature NMR lies in the range14.2−17.8 kcalmol-1.
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