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À propos de : Influence of step-induced anti-phase boundaries on the surface morphology of zincblende-type semiconductors        

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  • Influence of step-induced anti-phase boundaries on the surface morphology of zincblende-type semiconductors
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  • Using high-resolution low-energy electron diffraction, we find a “correlation” of the $c(2\times 2)$ reconstruction of the $\chem{ZnSe(001)}$ surface across [010]- and [100]-oriented steps. The difference of the corresponding step vectors is incompatible with the $c(2\times 2)$ reconstruction. Thus intersection points of [010]- and [100]-oriented steps at 2D island corners or kinks induce $c(2\times 2)$ anti-phase boundaries along the $[1\bar{1}0]$ direction. This mechanism yields a non-local contribution to the step energy which generally could be important for the explanation of step morphologies, e.g., of the recently observed, self-organized checkerboard-like arrangement of nano-terraces on a vicinal $\chem{CdTe(001)}$ surface.
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  • 7226
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  • © EDP Sciences, 2002
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  • EDP Sciences
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