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À propos de : $\chem{F_2}$-laser ablation and micro-patterning of $\chem{GaPO_4}$        

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  • $\chem{F_2}$-laser ablation and micro-patterning of $\chem{GaPO_4}$
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  • Pulsed-laser ablation and micro-patterning of gallium orthophosphate ( $\chem{GaPO_4}$) single crystals and ceramics by 157 $un{nm}$$\chem{F_2}$-laser radiation is reported. Micron-sized holes with sharp edges and smooth walls are obtained by employing projection-mask techniques. The threshold fluence of ablation is around $\Phi_{\ab{th}}\approx 180$$un{mJ/cm^2}$ and ablation rates of $W_{\ab{A}}\leq 90$$un{nm/pulse}$ are achieved at fluence levels of $\Phi\leq 2$$un{J/cm^2}$ for both material types.
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  • epl8036
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  • © EDP Sciences, 2004
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  • EDP Sciences
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