Pulsed-laser ablation and micro-patterning of gallium orthophosphate ( $\chem{GaPO_4}$) single crystals and ceramics by 157 $un{nm}$$\chem{F_2}$-laser radiation is reported. Micron-sized holes with sharp edges and smooth walls are obtained by employing projection-mask techniques. The threshold fluence of ablation is around $\Phi_{\ab{th}}\approx 180$$un{mJ/cm^2}$ and ablation rates of $W_{\ab{A}}\leq 90$$un{nm/pulse}$ are achieved at fluence levels of $\Phi\leq 2$$un{J/cm^2}$ for both material types.