| Abstract
| - Exact measurement of profile intensity of thickness fringes has been carried out in TEM images of a GaAs crystal and an InP crystal, by using a slow-scan CCD camera. The crystals have 90° wedge-shape with the (110) and (110) surfaces, and are axially illuminated by a 175-keV electron beam along the [100] axes. The intensities, measured in bright field and 002, 022, and 004 dark field images, are shown as reliable experimental data on the electron diffraction. A multi-slice simulation program is checked by comparing the calculated diffraction intensities with the experimental data.
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