About: FIB/HVEM observation of the configuration of cracks and the defect structure near the cracks in Si

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Attributs	Valeurs
type	work Article
Is Part Of	http://hub.abes.fr/oup/periodical/jmicro/1997/volume_46/issue_1/w
Subject	Physical: Full-length Papers focused ion beam/high-voltage electron microscopy, silicon cracks.
Title	FIB/HVEM observation of the configuration of cracks and the defect structure near the cracks in Si
has manifestation of work	http://hub.abes.fr/oup/periodical/jmicro/1997/volume_46/issue_1/101093oxfordjournalsjmicroa023489/m/print http://hub.abes.fr/oup/periodical/jmicro/1997/volume_46/issue_1/101093oxfordjournalsjmicroa023489/m/web
related by	http://hub.abes.fr/oup/periodical/jmicro/1997/volume_46/issue_1/101093oxfordjournalsjmicroa023489/authorship/1 http://hub.abes.fr/oup/periodical/jmicro/1997/volume_46/issue_1/101093oxfordjournalsjmicroa023489/authorship/2
Author	Abe S. Saka H.
Abstract	Cracks were introduced in a Si bulk single crystal by a Vickers indentation and foil specimens which contain the cracks in the plane of foil were prepared using a focused ion beam technique. The configuration of the cracks and the defect structures near the indentation were observed by transmission electron microscopy at 1000 kV. The cracks were classified into two groups, a halfpenny crack and a lateral crack. The emission of dislocations near the crack tips was observed by both an in-situ heating and a post-mortem heating experiment.
article type	other
publisher identifier	46.1.45
is part of this journal	Microscopy

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