About: Analysis of closely-spaced index-guided semiconductor lasers. II. Single-stripe channel-guide structures

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type	work Article
Is Part Of	http://hub.abes.fr/springer/periodical/11082/1984/volume_16/issue_3/w
Title	Analysis of closely-spaced index-guided semiconductor lasers. II. Single-stripe channel-guide structures
has manifestation of work	http://hub.abes.fr/springer/periodical/11082/1984/volume_16/issue_3/B916A097324D5B9BE053120B220A19A2/m/print http://hub.abes.fr/springer/periodical/11082/1984/volume_16/issue_3/B916A097324D5B9BE053120B220A19A2/m/web
related by	http://hub.abes.fr/springer/periodical/11082/1984/volume_16/issue_3/B916A097324D5B9BE053120B220A19A2/authorship/1
Author	http://hub.abes.fr/springer/periodical/11082/1984/volume_16/issue_3/B916A097324D5B9BE053120B220A19A2/shoreka
Abstract	Abstract. Calculations of the properties of double-channel injection lasers are presented. The dependence of the device characteristics upon a number of material parameters is found. Near-field and carrier concentration profiles are compared for devices of different dimensions at two output power values.
article type	OriginalPaper Papers
publisher identifier	BF00619379
Date Copyrighted	1984
Rights Holder	Chapman and Hall Ltd
is part of this journal	Opto-electronics

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