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Attributs	Valeurs
type	work Article
Is Part Of	http://hub.abes.fr/springer/periodical/11082/1996/volume_28/issue_6/w
Title	Semiconductor amplifiers and lasers with tapered gain regions
has manifestation of work	http://hub.abes.fr/springer/periodical/11082/1996/volume_28/issue_6/B916A09733095B9BE053120B220A19A2/m/print http://hub.abes.fr/springer/periodical/11082/1996/volume_28/issue_6/B916A09733095B9BE053120B220A19A2/m/web
related by	http://hub.abes.fr/springer/periodical/11082/1996/volume_28/issue_6/B916A09733095B9BE053120B220A19A2/authorship/1
Author	http://hub.abes.fr/springer/periodical/11082/1996/volume_28/issue_6/B916A09733095B9BE053120B220A19A2/walpolejn
Abstract	Abstract. Semiconductor amplifiers and lasers with tapered gain regions provide the highest-brightness all-semiconductor sources of near infrared continuous wave (CW) power and have many useful applications. Simple models of these devices are described. Their applications, device performance and brightness limitations are reviewed This work was sponsored by the US Department of the Air Force..
article type	Tutorial Review ReviewPaper
publisher identifier	BF00411298
Date Copyrighted	1996
Rights Holder	Chapman & Hall
is part of this journal	Opto-electronics

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