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Attributs	Valeurs
type	work Article
Is Part Of	http://hub.abes.fr/springer/periodical/11544/1995/volume_17/issue_11_12/w
Subject	Conference proceedings Electron states in low-dimensional structures (including quantum wells, superlattices, layer structures, and intercalation compounds) Other semiconductor-to-semiconductor contacts,p-n junctions, and heterojunctions
Title	Excitonic states of biased InAs quantum dots
has manifestation of work	http://hub.abes.fr/springer/periodical/11544/1995/volume_17/issue_11_12/B941376651DA2FE4E053120B220A6661/m/web http://hub.abes.fr/springer/periodical/11544/1995/volume_17/issue_11_12/B941376651DA2FE4E053120B220A6661/m/print
related by	http://hub.abes.fr/springer/periodical/11544/1995/volume_17/issue_11_12/B941376651DA2FE4E053120B220A6661/authorship/1 http://hub.abes.fr/springer/periodical/11544/1995/volume_17/issue_11_12/B941376651DA2FE4E053120B220A6661/authorship/2
Author	Bastard Gerald http://www.idref.fr/052502473/id
Abstract	Summary. We report on the calculation of electron and hole states in InAs/GaAs quantum dots. The latters are modelled by cones floating on a wetting layer. The calculations include the effect of an electric field applied parallel to the cone axis as well as the evaluation of the electron-hole correlation and exchange (short-range part) energies.
article type	OriginalPaper
publisher identifier	BF02457247
Date Copyrighted	1995
Rights Holder	Società Italiana di Fisica
is part of this journal	Il Nuovo Cimento D

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