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À propos de : Air-exposure effect on the resistivity of thin bismuth films        

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  • Air-exposure effect on the resistivity of thin bismuth films
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  • Abstract. A survey of previous studies on vacuum deposited metal films shows that in high frequency measurements, explicit reference to the effect of air-exposure is not made. The present work on bismuth films (in-situ and air-exposed) at dc and rf frequencies, carried out mainly to study the air-exposure effect, shows that in-situdc and rf and exposed rf all show nearly the same resistivity for thick continuous films. But air-exposed dc film resistances, when compared to in-situdc resistances, show that the grain boundary reflection coefficient, Rgin Mayadas-Shatzkes model changes from 0·2 to 0·6. This is shown to be due to the grain boundary oxidation. The result is substantiated by rf measurements.
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  • BF02848153
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  • 1981
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