. . . . . . . . . . . "BF00620910" . "Abstract. We show in this paper that little noise penalty is incurred by using readily available bipolar junction transistors in place of GaAs MESFETs in the first stage of high-speed optical transimpedance preamplifiers."@en . . . "Comparison of BJT and MESFET front ends in broadband optical transimpedance preamplifiers"@en . . . "1982" .