About: Electrodeposition of NanostructuredMesoporous Selenium Films (HI-eSe)

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Attributs	Valeurs
type	work Article
Is Part Of	http://hub.abes.fr/acs/periodical/cmatex/2001/volume_13/issue_11/w
Subject	Communication
Title	Electrodeposition of NanostructuredMesoporous Selenium Films (HI-eSe)
has manifestation of work	http://hub.abes.fr/acs/periodical/cmatex/2001/volume_13/issue_11/101021cm010484d/m/print http://hub.abes.fr/acs/periodical/cmatex/2001/volume_13/issue_11/101021cm010484d/m/web
related by	http://hub.abes.fr/acs/periodical/cmatex/2001/volume_13/issue_11/101021cm010484d/authorship/1 http://hub.abes.fr/acs/periodical/cmatex/2001/volume_13/issue_11/101021cm010484d/authorship/2 http://hub.abes.fr/acs/periodical/cmatex/2001/volume_13/issue_11/101021cm010484d/authorship/3
Author	Attard George S. Nandhakumar Iris Elliott J. M.
Abstract	Adherent and uniform nanostructured mesoporous films of selenium have been produced by electrodeposition from the hexagonal liquid-crystalline phase of a nonionic surfactant. The regular nanostructure consists of 25-Å diameter cylindrical pores distributed on a long-ranged hexagonal lattice. Electron diffraction reveals that selenium is single crystalline with an hcp structure. Current−voltage curves recorded by STM indicate that the electrodeposits are intrinsic semiconductors with an apparent band gap of ≈1.0 eV.
article type	rapid-communication
is part of this journal	Chemistry of Materials

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