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À propos de : Band Filling Control by Chemical Approach inMolecular Conductors, (TTM-TTP)MxCl4 [M, M‘ = Fe,Ga, Co, and Mn]        

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  • Band Filling Control by Chemical Approach inMolecular Conductors, (TTM-TTP)MxCl4 [M, M‘ = Fe,Ga, Co, and Mn]
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  • TTM-TTP-based 1:1-composition organic conductors with counteranions containing alloyedmetals,[TTM-TTP = 2,5-bis[4,5-bis(methylthio)-1,3-dithiol-2-ylidene]-1,3,4,6-tetrathiapentalene; M, M‘ = Fe, Ga, Co, and Mn], have been prepared. Thedegrees of oxidization of TTM-TTP molecules change with the ratio of monovalent (FeCl4-and GaCl4-) and divalent anions (CoCl42- and MnCl42-). Accordingly, the band filling of thedonor HOMO is chemically changed. These salts have the same crystal structure, consistingof one-dimensional uniform donor stacks, and are highly conductive. The conductivity isessentially flat down to 100−200 K, but the room-temperature resistivity and thethermoelectric power systematically increase as the band filling decreases from half fillingto empty.
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