| Abstract
| - We have implemented a kinetic Monte Carlo (KMC) simulation to study the effects of wafer miscut andwafer defects on the morphologies of Si (111) surfaces etched in NH4F. Although a conventional KMCsimulation reproduced previously published results, it failed to produce the morphologies observed in ourexperiments. By introducing both dopant sites and lattice defect sites into the model, we are able to simulatesamples having different dopant elements and densities as well as different defect concentrations. Using themodified KMC simulation, the simulated surface morphologies agree well with the morphologies observedin our experiments. The enhanced model also gives insights to the formation mechanism for multiple levelstacking pits, a notable morphology on the etched surfaces of samples with very small miscut angles.
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