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À propos de : Metal Acetylacetonate Domains Grown on H-Terminated Porous Silicon at RoomTemperature and Their Specific I−V Behavior        

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  • Metal Acetylacetonate Domains Grown on H-Terminated Porous Silicon at RoomTemperature and Their Specific I−V Behavior
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  • Porous silicon (PS) was incubated in an organic solution of metal acetylacetonates of Mn(acac)3, Fe(acac)3,Co(acac)3, and Ni(acac)2 (acac = MeCOCHCOMe) at room temperature. Crystal-like domains were found tobe spontaneously self-assembled on PS surfaces by atomic force microscopy (AFM). Spectroscopic studieswith attenuated total reflection Fourier transform infrared spectroscopy (ATR-FTIR) and X-ray photoelectronspectroscopy (XPS) revealed that the domains were grown from metal acetylacetonates. Current sensing atomicforce microscopy (CSAFM) was used to measure the I−V curves of domains in nanoscale and specific step-jump currents on the manganese and cobalt acetylacetonate domains were surprisingly detected.
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